MULTI-SIZE SiC WAFER CAPABILITY: Supports 150mm, 200mm, and 300mm SiC wafers for complete production flexibility
FULLY AUTOMATED PROCESSING: Model 3808-PWR300 offers Dry in/Dry out AND/OR Dry in/Wet out configurations
HARD MATERIALS PROCESSING: Handles hard-material (e.g., SiC, GaN, sapphire, diamond) with high removal rate polishing
BROAD SUBSTRATE COMPATIBILITY: Suitable for use on semiconductor, compound semiconductor, and MEMS/NEMS substrate materials
MAXIMUM MECHANICAL CAPABILITY: ~45 PSI (310 kPa) downforce
NON-CORROSIVE & LOW-EXPANSION MATERIAL STRUCTURE: Advanced materials ensure long-term stability and precision
INDUSTRY-LEADING THROUGHPUT: Highest wafer productivity with lowest cost per wafer
ADVANCED REPLACEMENT TECHNOLOGY: Eliminates the need for expensive CMP processes
SUPERIOR SILICON CARBIDE PROCESSING: Up to 11 microns per hour removal rate on Si-face with our advanced UniFlatZâ„¢ single head technology
VERSATILE WAFER THICKNESS HANDLING: GigaMat CMP supports wafers from 150 µm to several millimeters thick
WIDE SLURRY COMPATIBILITY: Compatible with diamond, permanganate, and alumina slurries
